| PART |
Description |
Maker |
| KMM5364005CSWG |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| AEPDH1M8LB-12 AEPDS1M8LB-85P AEPDH1M8LB-10P AEPDH1 |
1M X 8 MULTI DEVICE DRAM MODULE, 120 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 85 ns, SMA28 SIMM-28
1M X 8 MULTI DEVICE DRAM MODULE, 100 ns, SMA28 SIMM-28
|
Fox Electronics
|
| AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4 |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM
|
ALSC[Alliance Semiconductor Corporation]
ETC
|
| KMM5361203C2W |
1M x 36 DRAM SIMM(1M x 36 动RAM模块)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KMM5324004CSW |
4MBx32 DRAM Simm Using 4MBx16
|
Samsung Semiconductor
|
| KMM5362000BH |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM5324100CKG KMM5324000CKG KMM5324100CK KMM532400 |
4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
|
SAMSUNG[Samsung semiconductor]
|
| KMM5362000B2 KMM5362000B2G |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM5322104CKUG KMM5322104CKU |
2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
|
Samsung semiconductor
|
| KMM5362000B KMM5362000BG |
2M x 36 DRAM SIMM Memory Module
|
Samsung Electronics
|
| KMM5322204C2W |
2MBx32 DRAM Simm Using 1MBx16
|
Samsung Semiconductor
|
| KMM53232000CK |
32MBx32 DRAM Simm Using 16MBx4
|
Samsung Semiconductor
|
